metal organic chemical vapor deposition
英 [ˈmetl ɔːˈɡænɪk ˈkemɪkl ˈveɪpə(r) ˌdepəˈzɪʃn]
美 [ˈmetl ɔːrˈɡænɪk ˈkemɪkl ˈveɪpər ˌdepəˈzɪʃn]
金属有机气相沉积; 缩写词为MOCVD
双语例句
- Based on the analysis of energy loss in a laser diode, we optimize the structure of the laser diode and metal organic chemical vapor deposition ( MOCVD) growth condition.
针对半导体激光器的能量损耗情况，设计优化了半导体激光器的结构，改进了材料的金属有机化学气相沉积（MOCVD）生长条件。 - Separate confinement heterostructure strained single quantum well materials were grown by the technology of metal organic chemical vapor deposition ( MOCVD).
气相淀积（MOCVD）技术生长了分别限制应变单量子阱激光器材料。 - Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition ( MOCVD) with carbon nanotubes as templates in this paper.
通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。 - A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.
利用金属有机气相淀积方法生长了一种新型吸收体：高反射率半导体可饱和吸收镜。 - Metal Organic Chemical Vapor Deposition ( MOCVD) is a key technology in growing thin-films.
金属有机化学气相沉积（OCVD）一门制备薄膜材料的关键技术。 - In this paper, we report the photoluminescence from high quality nanocrystalline ZnO thin films. The high quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800 ℃, which are deposited by low pressure metal organic chemical vapor deposition technique.
报道了利用低压金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜。 - ZnO films were grown on GaAs ( 001) substrates at different surface treatment conditions and growth temperatures by metal organic chemical vapor deposition ( MOCVD).
采用金属有机化学汽相沉积生长法（MOCVD），在不同的衬底表面处理条件和生长温度下，在GaAs衬底上生长出了ZnO薄膜。 - 980 nm GaAs/ AlGaAs separate confinement hetero-structure single quantum well laser bars were grown by metal organic chemical vapor deposition.
利用金属有机物气相淀积生长了980nmGaAs/AlGaAs分别限制应变单量子阱激光器物质，通过常规工艺制成国际标准的1cm半导体激光器线阵列。 - Metal Organic Chemical Vapor Deposition ( MOCVD), using Chemical Vapor Deposition of metal organic compounds, is an effective method for acquiring special function materials and membrane.
金属有机化学气相沉积（MOCVD）法是化学气相沉积法的一种，主要选用金属有机化合物为物源进行化学气相沉积，是目前获取各类特殊功能材料和材料的有效方法之一。 - Various growth techniques of ZnO thin films, including magnetro sputtering, chemical vapor deposition, spray pyrolysis, sol gel processing, pulsed laser deposition, molecular beam epitaxy, atomic layer epitaxy and metal organic chemical vapor deposition were reviewed.
详细介绍了各种制备氧化锌薄膜的方法，包括磁控溅射法、化学气相沉积法、喷雾热解法、溶胶凝胶法、激光脉冲沉积法、分子束外延法、原子层外延生长法。 - Solar cells, made of single junction GaAs quantum wells, were fabricated by metal organic chemical vapor deposition.
介绍了采用金属有机化学气相沉积方法制备的单结GaAs量子阱太阳能电池。 - According to the principles and characteristics of Metal Organic chemical vapor Deposition ( MOCVD) a computer controlled hot wall low pressure MOCVD system was established.
本文根据金属有机物化学气相沉积（MOCVD）系统的原理和特点，建立了计算机自动控制的热壁低压MOCVD系统。 - The paper focused on the research of gas flow automatic control method of the MOCVD ( Metal Organic Chemical Vapor Deposition).
研究了金属有机物化学气相沉积（MOCVD）系统中气体流量的自动控制方法。 - Metal organic chemical vapor deposition growth and structure design of tunnel junction of GaInP_2/ GaAs/ Ge tandem solar cells
GaInP2/GaAs/Ge级联电池隧道结的结构设计及金属有机化学汽相淀积生长研究 - The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology.
采用金属有机化学气相淀积外延技术生长外延材料，并在GaAs集成电路工艺线上完成工艺制作。 - The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition ( MOCVD).
首先优化设计了器件结构，并利用金属有机物化学气相淀积（MOCVD）进行了器件的外延生长。 - The reflection high-energy electron diffraction ( RHEED) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition ( ECR-PEMOCVD) system designed by us was used to monitor the GaN growth process in-situ.
通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积（ECR-PEMOCVD）系统上装配反射高能电子衍射仪（RHEED），对外延GaN生长过程进行原位监测。 - MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition, which is a method used to grow material crystal on substrate via MOCVD device.
MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。 - ZnO films have been grown by many methods, such as magnetron sputtering, molecular beam epitaxy ( MBE), pulsed laser deposition ( PLD), spray pyrolysis and metal organic chemical vapor deposition ( MOCVD).
生长ZnO薄膜的方法很多，可采用诸如：磁控溅射、分子束外延、脉冲激光沉积、金属有机化合物气相沉积、喷雾热解等方法。 - The mathematics model of Metal organic chemical vapor deposition ( MOCVD) reactor with system of GaN deposition in a vertical reactor is introduced.
以垂直金属有机化学气相沉积（MOCVD）反应器沉积GaN为对象，建立了反应器内部数学模型。 - Metal organic chemical vapor deposition ( MOCVD) is widely used by researchers among all methods today.
目前，金属有机物化学气相沉积（MOCVD）是制备GaN薄膜最为广泛的工艺。 - ZnO Thin Films Grown by Metal Organic Chemical Vapor Deposition
金属有机物化学汽相外延法生长ZnO薄膜 - Superior ferroelectric properties with the remanent polarizations ( Pr) of about 100 μ C/ cm2 have been observed in polycrystalline and epitaxial BFO films deposited using pulsed-laser deposition, sputtering and metal organic chemical vapor deposition.
具有优异性能的多晶和外延的BFO薄膜已被激光脉冲沉积，磁控溅射以及化学气相沉积法制备成功，其剩余极化强度（Pr）达到了100μC/cm2。 - At the same time, the developments of molecular beam epitaxy ( MBE) and metal organic chemical vapor deposition ( MOCVD) have made the characteristics of the devices improved rapidly.
与此同时，随着分子束外延（MBE）和金属有机化学气相沉积（MOCVD）等生长技术的发展，使VCSEL器件得以飞速提高。 - Therefore, this paper focuses on the following works. 1. Metal organic chemical vapor deposition ( MOCVD) growth of Si-doped InGaN/ GaN quantum well superlattice sacrificial layer for the LED structure.
因此，本文围绕选择性剥离GaN外延做了如下四方面工作：1.金属有机化学气相沉积（MOCVD）生长具有Si掺杂的InGaN/GaN量子阱超晶格牺牲层的全结构的LED。 - Physical methods include evaporation and sputtering; Chemical methods mainly include molecule beam epitaxy ( MBE), metal organic chemical vapor deposition ( MOCVD), hydride vapor phase epitaxy ( HVPE) and so on.
物理方法包括各种蒸发和溅射：化学方法主要包括分子束外延（MBE）、金属有机物化学气相沉积（MOCVD）、氢化物气相外延（HVPE）等。 - There are several methods for depositing ferroelectric thin films, among which metal organic chemical vapor deposition ( MOCVD) method is widely used in large-scale production, low temperature, high compatibility with silicon integration process and other advantages.
铁电薄膜有多种制备方法，其中金属有机物化学气相沉积（MOCVD）法以可大面积生产、沉积温度低、薄膜质量好、与硅集成工艺兼容性高等特点被广泛用于铁电薄膜的制备。